K Ayouz-Chebout*, R Tala-Ighil, K Mhammedi, S Sam and N Gabouze
In the present paper, a gas sensing device based on Vanadium oxide thin films (V2O5)/ Porous Si (PS) / Si structure has been used to detect CO2 gas at different concentration. Amorphous and crystalline vanadium pentoxide (V2O5) thin films were grown onto monocristalline silicon and porous silicon substrates using the Dip-coating method. The Vanadium oxide has been produced from vanadium alcoxide precursor. Different structures based on V2O5 / Porous Si/ Si have been realized and studied. Current-voltage (I-V) characteristics show that the sensor properties were modified due to CO2 gas presence. The structure sensitivity increases potential and concentration of CO2 increase. In addition, the structure exhibits fast response and 32s recovery time. The Obtained results are promising since the measured response and recovery time were lowered compared to CH/PS/Si structure.