抽象的な

RF Performance of Carbon Nanotube Based Devices and Circuits

Anju Rose Tom, Aswathy K S, Gnana Sheela .K

This paper provides a global overview of radio frequency (RF) performance of various carbon-nano tube field effect Transistors (CNFET) devices and circuits considering noise and process variations. CNFET is one possible candidate to substitute silicon-based integrated circuit (IC) technology, as the performance increase of conventional transistors witnessed during the last decades will arrive at its ultimate limits in the near future. Its present progress is largely dominated by the materials science community due to the many still existing materials-related obstacles for realizing practically competitive transistors. Compared to graphene, carbon nano tube provides better properties for building field-effect transistors, and thus, has higher chances for eventually becoming a production technology.